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Aug. 5, 2009: Mitsubishi Electric Announces Sale of 15.0-inch Color TFT-LCD Modules for Industrial Use.
Dec. 9, 2008: Mitsubishi Electric Announces Sale of 'MGF4921AM' Low Noise GaAs HEMT for Satellite Digital Radios.
Dec. 4, 2008: Mitsubishi Electric Announces Sale of 7.2V High Power MOSFET for Commercial Radios.
Nov. 4, 2008: Mitsubishi Electric Announces Sale of High Power Amplifier for UHF-band RFID Reader/Writer Apparatus.
Jun. 12, 2008: Mitsubishi Electric Announces Sale of 'MGFS39E2527' High Power InGaP HBT Amplifier for WiMAX Terminals.
May 20, 2008: Mitsubishi Electric Announces Sale Of 'MGF4935AM' Ku Band Low Noise GaAs HEMT.
Feb. 21, 2008: Leading Optical Device Manufacturers Release Common Specifications for 40 Gbit/s Solutions Based on XLMD Optical Device Multi-Source Agreement.
Feb. 20, 2008: Mitsubishi Electric Announces Sale of SFP+ Compliant Driver IC for 10Gbps Direct Modulation Laser Diode.
Feb. 19, 2008: Mitsubishi Electric Announces Sale of Electroabsorption Modulator Laser Diode Device and Photo Diode Device for 40 Gbps Optical Transmission.
Feb. 5, 2008: Mitsubishi Electric Announces Sale of Transmitter Optical Sub Assembly Laser Modules for 10Gbps/8Gbps SFP+.
Jan. 31, 2008: Mitsubishi Electric to Obtain Ownership of Renesas Technology's Kumamoto Factory.
Nov. 8, 2007: Mitsubishi Electric Announces Sale of Internally Impedance Matched High Output GaAs FET Amplifier for WiMAX Base Transceiver Stations in Central and Eastern Europe.
Jun. 12, 2007: Mitsubishi Electric Announces Sale of ML520G51, 640nm 150mW CW Laser Diode.
Apr. 24, 2007: Mitsubishi Electric Develops 10 Gbps DWDM Electroabsorption Modulator Integrated Laser Diode Module Compliant with XDM-MSA.
Mar. 26, 2007: Leading Optical Chip and Module Manufacturers Target 40 Gbit/s Solution with an Optical Device (XLMD) MSA.
Mar. 13, 2007: Mitsubishi Electric Develops Low Noise Avalanche Photodiode for Use in 2.5 Gbps Optical Receivers.
Dec. 14, 2006: Mitsubishi Electric Announces Sale of Ku Band Low Noise GaAs HEMT.
Nov. 14, 2006: Mitsubishi Electric Announces Sale of Internally Impedance Matched High Output Power GaAs FETs for WiMAX Base Transceiver Stations.
Oct. 17, 2006: Mitsubishi Electric Announces Sale of 1.49µm High Power Laser Diode "ML9xx46 Series" For FTTH (G-PON).
Oct. 11, 2006: Mitsubishi Electric Announces Sale of Switchable Power Amplifier Module for WCDMA Applications.
Oct. 3, 2006: Mitsubishi Electric Announces Sale of High Output InGaP HBT Amplifier MGFS36E2527 for WiMAX Terminals.
Aug. 1, 2006: Mitsubishi Electric Announces Sales of Low Noise GaAs HEMT in Ka band "MGF4961B"
Mar. 1, 2006: Mitsubishi Electric Develops 10 Gbps Electroabsorption Modulator Integrated Laser Diode Module Compliant with XMD-MSA.
Jan. 17, 2006: Leading Optical Chip and Module Manufacturers Announce the Addition of Optical Devices with SC Connector Interface to (XMD) MSA for TOSA/ROSA.
Dec. 15, 2005: Mitsubishi Electric Announces Shipment of 1.3 Micrometer Wavelength Laser Diode for 2.5 Gbps Transmission.
Dec. 6, 2005: Mitsubishi Electric Announces Sale of Low Noise GaAs HEMT "MGF4934AM"
Sep. 13, 2005: Mitsubishi Electric Develops 10Gbps Low Noise Avalanche Photodiode Capable of 80km Transmission and Optical Sub-assembly.
Aug. 23, 2005: Mitsubishi Electric Begins Shipment of New 2.5 Gbps Semiconductor Laser Diode for 100km Distances.
Mar. 18, 2005: Mitsubishi Electric Develops 10Gbps High Output Electroabsorption Modulator (EAM) Capable of 80km Transmission and Optical Module FU-653 Sea.
Jan. 25, 2005: Mitsubishi Electric Begins Shipment of New Semiconductor Laser Diode for 2.5Gbps CWDM Fiber Optic Communication
Sep. 27, 2004: First 10Giga-bit Ethernet PHY IC Featuring Inter-Frame Link Signalling Developed by NTT Announced
Aug. 3, 2004: Mitsubishi Electric Launches New S-band High Power Amplifier Module
Jun. 8, 2004: Mitsubishi Electric Extends DataSurveyor(TM) Technology to VHF and UHF Power Amplifiers with New Design Accelerator Kit.