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Product Information

High-output Amplifiers for UHF-band RFID Reader/Writer Units

High-Output Amplifiers for UHF-Band RFID Reader/Writer Unit
RA01L9595M / RA01L8693MA
Industry First*1 ― built-in input/output matching circuit

*1 As of November 4, 2008
Overview
The RFID reader/writer unit, which is a non-contact RFID*2 tag data reader/writer, is used for many applications, such as physical distribution, transportation, inventory control, and cash registers. Demand for the product is increasing as customers aim to reduce their manufacturing costs.

This product, which features the first built-in input/output matching circuit for RFID reader/writer units, is a UHF band high-output amplifier that suppresses unwanted levels of radiation*3. It contributes to reduced manufacturing costs by helping to suppress unwanted radiation as well as by reducing the number of RFID reader/writer unit parts.

*2 Radio Frequency Identification; non-contact automatic recognition technology using radio
*3 Unwanted radio wave noise that causes electromagnetic interference.
Features
Industry First ― built-in input/output matching circuit to reduce the number of parts
Previously, it was necessary to separate the input and output of the high-output amplifier for the RFID reader/writer unit with an input/output matching circuit, in order to match impedance with the external circuit. However, this product utilizes a ceramic multilayer substrate to increase the density of part packaging. Additionally, for the first time in the industry, the input/output matching circuit is been built-in, realizing a package size of 9.2 x 9.1mm. This means an attached matching circuit is not required, helping to reduce cost by simplifying the circuit design as well as reducing the number of necessary parts.
Industry First ― need for countermeasures reduced by suppressing unwanted radiation
To suppress unwanted radiation, it was previously necessary to cover the high-output amplifier in a metallic case, or attach a radio wave absorbent or an electro-conductive tape to the cabinet interior. For this product, for the first time in the industry, a metallic cap is utilized in the high-output amplifier for the RFID reader/writer unit. This enhances the electromagnetic shielding effect of the high-output amplifier itself, suppressing radiation leakage. This reduces the need for countermeasures against unwanted radiation for the RFID reader/writer unit, thereby contributing to reduced manufacturing cost.
Operable with drain voltage from 3.3 to 5V / Available for both portable and stationary types
The utilization of a high-voltage silicon MOSFET*4 enables operation with drain voltages from 3.3 to 5V. The product is available for portable RFID reader/writer units, which are conventionally used with 3.3V power supplies, or stationary RFID reader/writer units, which are conventionally used with 5V power supplies.

*4 Metal Oxide Semiconductor Field Effect Transistor
Main Specificaitons
Item RA01L9595M RA01L8693MA
Output voltage 1.4W min.
Drain supply voltage (Vdd) From 3.3 to 5V (3.3V recommended)
Input voltage 30mW
Package outline Leadless SMD package
Zg=Zl 50Ω
Overall efficiency 35% min. (at 3.3V) 38% min. (at 3.3V)
Frequency range From 952 to 954MHz (for Japan) From 865 to 928MHz (for Europe and U.S.)
Outside dimensions 9.2 x 9.1 x 1.8mm
Applications
UHF-band RFID reader/writer units
 
Future Development
While using a lead-less SMD package similar to the RA01L in package shape, we will continue to aim to achieve lower cost and higher output.
Performance map
Performance map