Mitsubishi High Frequency & Optical Semiconductors

Mitsubishi High Frequency & Optical Semiconductors

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Mitsubishi Si Discrete –
VHF Band

Type.
No.

Electrical
Characteristics

 
fL
(MHz)
Po
  (W)
Gp
(dB)
Eff
(%)
Pin
(W)
Vcc
(V)
Structure
BeO
Package
Outline

2SC2086
Size 116K
 
27
0.3
13.0
50
0.015
12.0
Si,
NPN, EP
 
TO-92L

2SC2166
Size 124K
 
27
6
13.8
55
0.25
12.0
Si,
NPN, EP
 
T-30

2SC1944
Size 55K
 
27
13
11.1
55
1
12.0
Si,
NPN, EP
 
T-30

2SC3133
Size 125K
 
27
13
14.1
60
0.5
12.0
Si,
NPN, EP
*1
T-30E

See also  MITSUBISHI ELECTRIC SEMICONDUCTOR

2SC1945
Size 127K
 
27
14
14.5
60
0.5
12.0
Si,
NPN, EP
*1
T-30E

2SC1969
Size 142K
 
27
16
12.0
60
1
12.0
Si,
NPN, EP
 
T-30

2SC3241
Size 139K
 
30
75
12.7
55
4
12.5
Si,
NPN, EP
*1
T-45E

2SC2904
Size 123K
 
30
100
11.5
55
7
12.5
Si,
NPN, EP
*1
T-40E

2SC3240
Size 137K
 
30
100
11.5
55
7
12.5
Si,
NPN, EP
*1
T-45E

2SC3908
Size 239K
 
30
100
11.5
55
7
12.5
Si,
NPN, EP
*1
T-40E

2SC2097
Size 129K
 
30
75
12.7
55
4
13.5
Si,
NPN, EP
*1
T-40E

2SC741
size 124K
 
150
0.2
13.0
50
0.01
13.5
Si,
NPN, EP
 
T-8C

2SC730
Size 139K
 
150
1
10.0
50
0.1
13.5
Si,
NPN, EP
*1
T-8

2SC2055
Size 114K
 
175
0.2
13.0
50
0.01
7.2
Si,
NPN, EP
 
TO-92L

2SC3017
Size 86K
 
175
1.5
11.8
55
0.1
7.2
Si,
NPN, EP
*1
T-8E

2SC3404
Size 161K
 
175
1.5
12.7
55
0.08
7.2
Si,
NPN, EP
*1
T-46

2SC2056
Size 120K
 
175
1.6
9.0
55
0.2
7.2
Si,
NPN, EP
*1
T-8E

2SC3018
Size 132K
 
175
3
13.0
55
0.15
7.2
Si,
NPN, EP
*1
T-31E

2SC3001
Size 124K
 
175
6
13.0
60
0.3
7.2
Si,
NPN, EP
*1
T-31E

2SC4240
Size  96K
 
175
6
13.0
60
0.3
7.2
Si,
NPN, EP
*1
T-47

2SC2627
Size 126K
 
175
5
13.0
60
0.25
12.5
Si,
NPN, EP
*1
T-41

2SC2628
Size 147K
 
175
15
11.8
60
1
12.5
Si,
NPN, EP
*1
T-41

See also  Mitsubishi High Frequency & Optical Semiconductors

2SC2630
Size 126K
 
175
50
7.0
60
10
12.5
Si,
NPN, EP
*1
T-40

2SC2694
Size 127K
 
175
70
6.7
60
15
12.5
Si,
NPN, EP
*1
T-40

2SC5125
Size 129K
 
175
80
7.3
60
15
12.5
Si,
NPN, EP
*1
T-40E

2SC2053
Size 133K
 
175
0.15
15.7
40
0.004
13.5
Si,
NPN, EP
 
TO-92L

2SC2538
Size 113K
 
175
0.5
10.0
45
0.05
13.5
Si,
NPN, EP
 
TO-92L

2SC1970
Size 118K
 
175
1
9.2
50
0.12
13.5
Si,
NPN, EP
 
T-30

2SC1947
Size 120K
 
175
3.5
10.7
50
0.3
13.5
Si,
NPN, EP
*1
T-8E

2SC1965A
 
175
6
10.0
50
0.6
13.5
Si,
NPN, EP
*1
TC-17

2SC1971
Size 121K
 
175
6
10.0
60
0.6
13.5
Si,
NPN, EP
*1
T-30E

2SC2237
Size 124K
 
175
6
13.8
60
0.25
13.5
Si,
NPN, EP
*1
T-31E

2SC3628
Size 136K
 
175
6
13.8
60
0.25
13.5
Si,
NPN, EP
*1
T-46

2SC1729
Size 124K
 
175
14
10.0
60
1.4
13.5
Si,
NPN, EP
*1
T-31E

2SC1972
Size 123K
 
175
14
7.5
60
2.5
13.5
Si,
NPN, EP
*1
T-30E

2SC2539
Size 127K
 
175
14
14.5
60
0.5
13.5
Si,
NPN, EP
*1
T-31E

2SC2094
Size 144K
 
175
15
8.8
60
2
13.5
Si,
NPN, EP
*1
T-31E

2SC1946
Size 126K
 
175
28
6.7
60
6
13.5
Si,
NPN, EP
*1
T-31E

2SC1946A
Size 155K
 
175
30
10.0
60
3
13.5
Si,
NPN, EP
*1
T-31E

2SC2629
Size 127K
 
175
30
9.3
60
3.5
13.5
Si,
NPN, EP
*1
T-41

See also  MITSUBISHI ELECTRIC SEMICONDUCTOR

2SC2540
Size 129K
 
175
40
8.2
60
6
13.5
Si,
NPN, EP
*1
T-40E

2SC2133
Size 145K
 
220
30
8.2
55
4.5
28.0
Si,
NPN, EP
*1
T-40E

2SC2134
Size 151K
 
220
60
7.0
55
12
28.0
Si,
NPN, EP
*1
T-40E

Note # :
Under Development
*1: BeO is used in a package. Handle with care at the
disposal.
Specifications are shown in minimum values. Please refer to
each spec. sheet for precise information.

Last Updated on June-22-2000
By EDG – Sunnyvale

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Electric & Electronics USA, Inc.
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