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M81706AFP, M81709FP
By reducing I/O delay by 1/2 compared to conventional models, high-speed drive control is realized
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Outline
Recently, with the appearance of products such as the Plasma Display Panel (PDP) and HID (High Intensity Discharge), compact high-voltage driver semiconductors with high-speed control are needed for high-voltage elements such as power MOSFET, IGBT, etc. Now, to meet the needs of this market, we have developed a new miniaturization process to produce a 600V high-voltage half-bridge driver that enables high-speed control of high-voltage elements.
Features
Enables high-speed drive
By adopting a new miniaturization process, I/O delay time is reduced drastically by 1/2 (compared to the company's previous models) to realize a high-speed drive for high-voltage elements.
Input circuit power source is internalized
By internalizing the input circuit power source, power-source drive on the low-voltage side drive circuit became possible. Signaling can be input directly from the microcomputer.
High reliability
High reliability is assured by protective circuitry such as line-voltage anomaly (low-voltage) guard circuit, up-down simultaneous ON input signal guard circuit, etc.
Applications
IGBT/MOSFET drive for PDPs, industrial use HID lamps, air-conditioners, washing machines, refrigerators, general inverters, AC servos, etc.
Future deployment
In order to answer a variety of demands, we aim to produce high-performance, high-added-value products.
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