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MGF 4934AM
High performance HEMT, High Electron Mobility Transistor, contributes to enhanced function of satellite broadcast equipment
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Outline
Use in low-noise amplifier for DBS converter
Features

High Frequency Gain Improvement by 1dB
By developing a new process in which the protective film for a low dielectric constant is formed in the wafer stage, we have achieved a reduction in the parasitic capacitance which affects high-frequency characteristics adversely and obtained noise minimum power gain (Gs) 12.5 dB *1 with improvement of 1dB, compared with that of the existing product *2.
We are controlling the Noise Factor (NF), which is the scale of noise generated from inside the device at 0.6dB *2.
*1: Comparison wtih our existing product "MGF4931AM"
*2: The standard value at Frequency =12 GHz

Adopted a standard type 4-pin flat-lead package
As the packaging is a standard 4-pin flat-lead package as before, it is easy to replace in the existing product.

Main Specifications
Recommended condition: VDS=2V, ID=10 mA
Noise factor (Nfmin): 0.6dB (f=12 GHz, Standard value)
Noise minimum power gain (Gs): 12.5dB (f=12 GHz, Standard value)
Applications
For use in subsequent stage low noise amplifiers in 12 GHz band DBS converters
For use in mixers in 12 GHz band DBS converters
Future Deployment
Market trend
Product usage within one set is expected to increase, with the advance of DBS Converter enhancement
Technology trend
Higher gain, lower noise and hgher frequency (shift form 12 GHz band to 20 GHz band)
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