High Frequency Gain Improvement by 1dB
By developing a new process in which the protective film for a low dielectric constant is formed in the wafer stage, we have achieved a reduction in the parasitic capacitance which affects high-frequency characteristics adversely and obtained noise minimum power gain (Gs) 12.5 dB *1 with improvement of 1dB, compared with that of the existing product *2.
We are controlling the Noise Factor (NF), which is the scale of noise generated from inside the device at 0.6dB *2.
*1: Comparison wtih our existing product "MGF4931AM"
*2: The standard value at Frequency =12 GHz
Adopted a standard type 4-pin flat-lead package
As the packaging is a standard 4-pin flat-lead package as before, it is easy to replace in the existing product.
Recommended condition: VDS=2V, ID=10 mA
Noise factor (Nfmin): 0.6dB (f=12 GHz, Standard
Noise minimum power gain (Gs): 12.5dB (f=12
GHz, Standard value)
For use in subsequent stage low noise amplifiers
in 12 GHz band DBS converters
For use in mixers in 12 GHz band DBS converters
Product usage within one set is expected to increase, with the advance of DBS Converter enhancement
Higher gain, lower noise and hgher frequency (shift form 12 GHz
band to 20 GHz band)