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RD12MVP1/RD09MUP2/RD05MMP1
Achieving industry-leading output of 7.2 V operation with improved heat radiation characteristics for better mountability
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Outline
Demand is rising for high-frequency power amplifiers for commercial radios that have higher performance (higher output, destruction resistance and efficiency) with a more compact optimal thermal design for better mountability. Utilizing optimal MOSFET chips for each frequency band and newly designed mold packaging allows for improved mountability and lower thermal resistance. We have developed three varieties of MOSFETs that operate at 7.2 V for use in portable commercial radio power amplifiers. These MOSFETs are perfect for portable commercial radios requiring high output.
Features
High output
By utilizing an optimal RF MOSFET for each frequency band, we have achieved the industry's highest MOSFET output with an operating voltage of 7.2 V. We have increased the output levels by 43%, or more than 10 W (175 MHz) in VHF, and by 14%, or more than 8 W (520 MHz) in UHF.*1 We have also added a new line of products for the 900MHz band.
*1. Compared to RD07MVS1 (more than 7 W)
New heat radiation mechanism boosts heat radiation characteristics
We re-examined the basic configuration and adopted a new heat radiation mechanism that repositions the upper heat spreader surface so that it is facing opposite the device's electric terminals. This contributes to better mountability and a simpler thermal design while improving the heat radiation characteristics when mounted on radios.
Applications
Ideal for a variety of commercial radios
Future Deployment
We will develop a line of discrete products with a higher output (12.5 V).
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