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Outline
Mitsubishi GaAs devices support the realization of the IT society.
Communications networks are developing rapidly with high-speed internet, video on demand, high-speed data communications, etc. With its extensive lineup of products for satellite installation, base stations and mobile phones, Mitsubishi's GaAs devices offer the ideal solution toward the realization of the IT society.
Features
Internally matched, medium/high-power FET with high efficiency and low distortion - ideal as W-CDMA base stations.
GaAsFET power amplifier module that boasts the smallest volume 0.03cc in its class, and is compatible with 800MHz to 1.5GHz band PDC system.
Transmitter module with only 0.1cc volume, it contributes greatly to the miniaturization of triple-band mobiles.
Main Applications
Mobile phones
Mobile phone base stations
Devices for satellite installation
Select Map
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Data Sheets
Type Semiconductor list
Low-noise GaAs FET  Low-noise GaAs FET
Low-noise GaAs HEMT  Low-noise GaAs HEMT
High-power GaAs FET
(small signal gain stage)
 High-power GaAs FET (small signal gain stage)
L/S band internally matched
power GaAs FET
 L/S band internally matched power GaAs FET
C band internally matched
power GaAs FET
 C band internally matched power GaAs FET
X/Ku band internally matched
power GaAs FET
 X/Ku band internally matched power GaAs FET
GaAs hybrid MMIC
for wireless handset
 GaAs hybrid MMIC for wireless handset
GaAs hybrid module
for wireless handset
 GaAs hybrid module for wireless handset



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